Design Guidelines: Substrate

All circuit designs begin with the proper choice of substrate.  Factors such as dielectric constant, loss tangent, thermal dissipation and cost all factor into the proper choice of material.  We offer our services on all substrate materials — Al2O3 (Alumina — 99.6% as-fired or polished), BeO, AlN, Fused Silica and Barium Titanate all provide various properties of interest to the designer.

 

Common Substrates and Properties

Material Surface Finish
& Roughness
inch/inch g/cm3 KX10-3 10-6/°C (@25°C)
w/m°K
kV/
mm
Ωcm 1MHz/
10GHz
1MHz/
10GHz
A B C D E F G H I
Alumina
Fired
± 3µ"
± 0.003
3.88
 
90
 
7-8.3
 
~35
 
~23
 
<1014
 
9.9/
9.6
 
.001/
.002
 
Pol.
< 1µ"
0.0005
Aluminum Nitride
Lapped
12"-20µ"
0.001
3.30
59
4.6
170
~15
<1013
8.5-9.2
/na
.004/
na
Pol.
< 2µ"
0.0005
Fused Silica
Pol.
60/40
0.0005
2.20
25
0.55
1.38
30
<1010
3.82/
na
-
Lapped
7 -12µ"
0.0005
Sapphire
Pol.
<1µ"
0.0005
3.97
60
5.3
~40
-
<1017
9.3*-11.4
/na
.00086-.
0003*
Lapped
10"-20µ"
0.0005
Ferrite
Pol.
10µ
0.001
-
-
-
-
-
< 1017
11.3/
15.4
.0002-
.0015

*Varies with crystal orientation. A Plane / C Plane

A: Camber B: Density C: Flexural Strength D: Thermal Expansion E: Thermal Conductivity
F: Dielectric Strength G: Volume Resistivity H: Dielectric Constant I: Loss Tangent

 

Materials Properties Chart

Properties Units Polished High Density 996 Alum. Oxide As-fired High Density 996 Alum. Oxide Hi-rel Grade Aluminum
Nitride
Fused Silica Quartz Sapphire
(Crystalline)
Polished
Titanates
Ferrites
and Garnets
Chemical Composition
 
AI2O3
AI2O3
AIN
 
SiO2
 
AI2O3
 
 
 
Purity
%
99.6
99.6
98
100
100
Color
 
White
White
Tan
Transparent
Transparent
Cream
Gray
Nominal Density
g/cm3
3.87
3.87
3.28
2.2
3.97
Surface Finish (Polished)
μ-inches
<1.0
n/a
<2.0
60/40 Optical
<1.0μ-inch CLA
<3.0
<16.0
Surface Finish (As fired)
μ-inches
n/a
2-3
n/a
n/a
n/a
n/a
n/a
Camber
inch/inch
.0003/.0005
.002
.0003/.0005
.0003/.0005
.0003/.0005

Thickness
 
inches
0.004-.040*
0.005-0.025*
0.004-0.100*
0.004-0.080*
0.004-0.050*
0.005-0.025*
0.010-0.025*
Thickness Tolerance
inches
±0.0005
±0.001*
±0.0005
±0.0005
±0.0005
±0.0005
±0.0005
Process Sizes
inches
 
 
 
 
 
 
 
(L/W)
1.0/4.5
1.0/6.0
1.0/2.25
1.0/2.25
1.0/2.25
1.0/2.25
1.0/2.25
 
Coefficient of Thermal Expansion (CTE)
10-6
7.0-8.3
(25-1000°C)
7.0-8.3
(25-1000°C)
4.6
(25-300°C)
0.55
(20-320°C)
A plane @
25°C-5.3
Thermal Conductivity
Watts/m°K
26.9
26.9
170
n/a
n/a
Dielectric Constant
@1 MHz
9.9±0.1
9.9±0.1
8.6
3.826
11.5/9.3†
36–180
14.5–17.6
Dielectric Constant
@4 MHz
9.9
9.9
Dielectric Constant
@10 MHz
9.7
9.7
Dissipation Factor (Loss Tangent)
@1 MHz
0.0001
0.0001
0.001
0.000015
.00086/.0003†
Dissipation Factor (Loss Tangent)
@10 MHz
0.0002
0.0002
Q
@1 GHz
5000
5000
5000
Hardness
Rockwell
87
87
n/a
7 Mohs
1800/2200A
Knoop
Flexural Strength
K(10-3) lbs/sq.in.
90
90
59
(4 pt. bend)
25
60
Compressive Strength
M(10-3) lbs/sq.in.
54
54
n/a
161
350
Grain Size
um (microns)
<1.0
<1.0
5-7
Amorphous
Single Crystal

• Additional thicknesses and tolerances available upon request
† Value varies with orientation ("A" plane / "C" plane)